It has been an elusive goal for decades to combine the directly tunable bandgap of III–V compounds with advanced silicon fabrication technology on a CMOS platform to achieve a seamless integration of active photonic components with silicon electronics. Our nanophotonic projects focus on exploring scaled III–V active components monolithically integrated on silicon as emitters and detectors for applications in communication and IoT.
More: https://www.zurich.ibm.com/st/nanopho...