Fabrication of NMOS |
must know steps of NMOS fabrication
timestamps:
0:00 introduction
0:39 step 1 FOX creation
0:49 step 2 Oxide window creation
0:59 step 3 TOX creation
1:16 step 4 PolySi deposition
1:29 step 5 polySi etching
1:37 step 6 TOX etching
1:53 step 7 self-aligned process
2:39 step 8 deposition and patterning SiO2
3:00 step 9 Metallization
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in previous video we have seen how a pattern is transferred onto a Si substrate and window is created in the SiO2 layer. this video is about the complete fabrication NMOS transistor. there are total 9 steps: FOX creation, Oxide window creation, TOX creation, PolySi deposition, polySi etching, TOX etching, self-aligned process, deposition and patterning SiO2 and Metallization.
each steps include masking and photolithography which we have already studied in detail in the previous video.
FOX: Field Oxide, has lots of importance in the fabrication process. it isolates one transistor from other neighbouring transistors. Moreover it checks leakage current also know as sub threshold current.
TOX: Thin Oxide or Gate Oxide, it is high quality oxide layer. it is deposited for two main purposes, first one is to form Gate of the device and other one is interconnects.
Self-aligned process: it is the most important step and somehow confusing for students with diffusion or ion implantation process. in this step, area of source and drain diffusion region is automatically defined by the early patterning of the Gate oxide layer.
Helpful to BTech, BE, MTech, MS, Research fellows and Faculties.
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