Example of diffusion in semi-conducting materials - Part 2
Example 7.6 Callister
Boron atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of B in this silicon material is known to be 1x10^20 atoms/m3. The predeposition treatment is to conducted at 900oC for 30 minutes; the surface concentration of B is to be maintained at a constant level of 3x10^26 atoms/m3. Drive-in diffusion will be carried out at 1100oC for a period of 2 h. For the diffusion coefficient of B in Si, values of Qd and Do are 3.87 eV/atom and 2.4x10^-3 m2/s, respectively.
Calculate the value of Q0
Determine the junction depth