BJT common emitter characteristics and h parameter extraction in Tina-TI

Опубликовано: 14 Май 2026
на канале: Electronic Devices & Circuits
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This video is about the simulation of BJT characteristics virtual lab in Tina-TI platform. The output characteristics of BJT in common emitter mode are demonstrated using the circuit simulator. Output characteristics of BJT in common emitter mode is a plot of VCE vs IC for a constant base current (IB). The output characteristics are divided into three distinct regions: Active, saturation and cutoff region. in active region, base-emitter junction is forward biased and base-collector junction is reverse biased. This region is used to design amplifiers using transistors. When both junctions of BJT are forward-biased, the region is saturation. This region is located near y axis (close to VCE=0 point). The value of VCE in this region is a few millivont (200mV approx). In the cut-off region, both junctions of BJT are reverse biased and BJT is OFF. Only a small amount of leakage current flows through BJT.
CE input characteristics can be found here:    • BJT Common Emitter Input Characteristics (...  
Check other virtual lab experiments in TINKERCAD.
h-parameter Extraction:
The transistor is a two-port device. Its input circuit contains a dependent voltage source in series with impedance and the output circuit includes a dependent current source in parallel with impedance.
Define by the relations as shown below:
Vbe = hie Ib + hre Vce ------------------------------------ (1)
Ic = hfe Ib + hoe Vce ------------------------------------- (2)
From equation (1) hie = Vbe/Ib|Vce = 0, Input impedance with output short-circuit. hre= Vbe/Vce|Ib = 0, Reverse open circuit voltage gain.
These two parameters hie and hre can be found from the input characteristics.
From the (1), hie = Vbe/Ib|VCE = constant
and hre= Vbe/Vce|IB = constant
From equation (2) hfe = Ic/Ib for Vce = 0, Forward short circuit current gain.
hoe= Ic/Vce for Ib = 0, Output admittance with input open-circuited.
In this video, a detailed extraction process of all four h-parameter is demonstrated.
For detailed discussion regarding BJT h-model, refer to    • Analysis of BJT amplifier using hybrid model  
Other important design tutorials:
*Circuit simulation using TINKERCAD
   • Circuit Simulation using TINKERCAD  

Relevant topics of Analog Electronics:
*Basic semiconductor Physics
   • Basic semiconductor physics  

*P-N Junction diode & diode circuits
   • PN Junction Diode and Diode circuits  

*BJT Characteristics and Amplifiers
   • BJT working Mechanism and BJT amplifiers  

*Selected Objective type Question for Interview
   • Objective Type Questions for Test and Inte...  

*Circuit Analysis using TINA-TI
   • Analog Circuit Simulation using TINA-TI  

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