T-ray metrology podcast: Whole Silicon Carbide Wafers by T-ray Imaging
Silicon carbide requires high temperature process for crystal growth
Proper characterization is challenging at high temperatures
Main process is Physical vapor transport (PVT) akaseeded sublimation deposition (SSD).
TEM images show a frozen-in-time snapshot of very small area
Overall condition of the entire wafer must be inspected
T-ray is a new modality of cameraless imaging
volume, layer-by-layer, reflection mode, and transmission mode
T-ray can see more: sub-surface, layer-by-layer
T-ray can see small features: nano-scale to sub-Angstrom
T-ray can see clearly: clarity observe features, lattice, interfaces