V - I Characteristics of PN Junction Diode | தமிழில் | Simple Let's Crack it
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The Voltage-Current (V-I) characteristics of a PN junction diode describe how the current passing through the diode varies with the voltage applied across it. Here are the typical characteristics of a PN junction diode:
Forward Bias:
When a positive voltage (forward bias) is applied to the P-type material and a negative voltage to the N-type material, the diode becomes conductive.
At the beginning of the forward bias, there is a small threshold voltage (typically around 0.6 to 0.7 volts for silicon diodes) that must be overcome to start the flow of current.
Once the threshold voltage is reached, the diode conducts, and the current through the diode increases rapidly with a slight increase in voltage.
The relationship between current and voltage in the forward bias region is nearly exponential, described by the Shockley diode equation: I = I0 * (e^(qV / kT) - 1), where I is the current, V is the voltage, I0 is the reverse saturation current, q is the charge of an electron, k is Boltzmann's constant, and T is the temperature.
Reverse Bias:
When a negative voltage (reverse bias) is applied to the P-type material and a positive voltage to the N-type material, the diode becomes non-conductive.
In this region, only a very small reverse current (reverse leakage current) flows, and it is nearly constant over a wide range of applied reverse voltage.
At a certain voltage called the breakdown voltage or reverse breakdown voltage (usually higher than the reverse bias threshold voltage), the diode will experience a sudden increase in current, and it may break down due to the Zener effect or avalanche breakdown.
In summary, the V-I characteristics of a PN junction diode show that it conducts current in the forward bias region and has very low current in the reverse bias region until it reaches the breakdown voltage. These characteristics make diodes useful for rectification, signal clipping, voltage regulation, and various other applications in electronic circuits. The specific values of the threshold voltage and breakdown voltage depend on the material and doping levels of the diode.
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