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RTL to GDSII flow | Introduction of RTL to GDS Flow | Various EDA tools used in RTL to GDS flow

Опубликовано: 18 Август 2026
на канале: Team VLSI
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This video explains the various techniques to prevent Latch-up issue in CMOS technology. Guard ring, well tap cell, retrograde doping, epi layer, Silicon on Insulator (SOI) and many more have been explained in details.
Placement of Well tap cells in physical design and how it helps to prevent the latch-up has also been covered in this session.
If you feel this video is relevant to your domain and useful, please like the video and subscribe to this channel.
Your queries/suggestions are most welcome in the comment section.

----------------------------------------------
VIDEOS IN THIS SERIES
1. Latchup issue:
   • Latch-up  in CMOS Technology | Latch-up Fo...  
2. Latchup prevention techniques
   • Latch-up prevention in CMOS | Various tech...  
3. Antenna effect:
   • Antenna effect in VLSI Fabrication | Plasm...  
4. Antenna prevention techniques
   • Antenna Effect Prevention Techniques in VL...  
5. Electromigration issue in ASIC
   • Electromigration in VLSI Design | What is ...  
6. IR Drop Issue in VLSI
   • IR Drop issue in VLSI | What is IR drop in...  
7. On-Chip variations
   • On-Chip Variation in VLSI | OCV | Why OCV ...  
8. Crosstalk effect in VLSI
   • Crosstalk issue in VLSI | Signal Integrity...  
9. Crosstalk prevention
   • Crosstalk issue and  prevention techniques...  
------------------------------------------------------------------------------
Connect with us
All on one page: https://www.teamvlsi.com/p/contact_8....
Blog: https://www.teamvlsi.com
Facebook Page:   / teamvlsi  
WhatsApp Group: https://chat.whatsapp.com/C6etLHR6oAf...
Telegram Group: https://t.me/teamvlsi (Or search team VLSI on telegram)
Email: [email protected]

#LatchUp #LatchUpPrevention #TeamVLSI

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